RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-175HMz SE
Products specifications
| Maximum Operating Temperature | + 150 C |
| Gain | 16 dB |
| Technology | Si |
| Output Power | 20 W |
| Rds On - Drain-Source Resistance | 1 Ohms |
| Product Type | RF MOSFET Transistors |
| Id - Continuous Drain Current | 5 A |
| Vds - Drain-Source Breakdown Voltage | 70 V |
| Transistor Polarity | N-Channel |