RF MOSFET Transistors Silicon DMOS RF FET 40W-28V-175HMz SE
Products specifications
| Vds - Drain-Source Breakdown Voltage | 70 V |
| Transistor Polarity | N-Channel |
| Gain | 16 dB |
| Technology | Si |
| Output Power | 40 W |
| Id - Continuous Drain Current | 10 A |
| Maximum Operating Temperature | + 150 C |
| Product Type | RF MOSFET Transistors |