RF MOSFET Transistors Silicon DMOS RF FET 100W-28V-175MHz SE
Products specifications
| Vds - Drain-Source Breakdown Voltage | 70 V |
| Id - Continuous Drain Current | 25 A |
| Gain | 16 dB |
| Maximum Operating Temperature | + 150 C |
| Product Type | RF MOSFET Transistors |
| Transistor Polarity | N-Channel |
| Output Power | 100 W |
| Technology | Si |