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RF MOSFET Transistors Silicon DMOS RF FET 400W-28V-175MHz PP

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RF MOSFET Transistors Silicon DMOS RF FET 400W-28V-175MHz PP

Products specifications

Technology	Si
Output Power	400 W
Id - Continuous Drain Current	40 A
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	70 V
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Gain	13 dB

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Products specifications

Technology	Si
Output Power	400 W
Id - Continuous Drain Current	40 A
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	70 V
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors
Gain	13 dB