RF MOSFET Transistors RF MOSFET
Products specifications
| Transistor Polarity | N-Channel |
| Output Power | 400 W |
| Gain | 16 dB |
| Product Type | RF MOSFET Transistors |
| Technology | Si |
| Vds - Drain-Source Breakdown Voltage | 70 V |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 35 A |