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RF MOSFET Transistors Silicon DMOS RF FET 10W-12.5V-500MHz SE

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RF MOSFET Transistors Silicon DMOS RF FET 10W-12.5V-500MHz SE

Products specifications

Transistor Polarity	N-Channel
Output Power	10 W
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	40 V
Gain	10 dB
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	10 A

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Products specifications

Transistor Polarity	N-Channel
Output Power	10 W
Maximum Operating Temperature	+ 150 C
Technology	Si
Vds - Drain-Source Breakdown Voltage	40 V
Gain	10 dB
Product Type	RF MOSFET Transistors
Id - Continuous Drain Current	10 A