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RF MOSFET Transistors Silicon DMOS RF FET 6W-7.2V-500MHz SE

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RF MOSFET Transistors Silicon DMOS RF FET 6W-7.2V-500MHz SE

Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	20 A
Product Type	RF MOSFET Transistors
Output Power	6 W
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Gain	10 dB
Technology	Si

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Products specifications

Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	20 A
Product Type	RF MOSFET Transistors
Output Power	6 W
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Gain	10 dB
Technology	Si