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RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-1GHz SE

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RF MOSFET Transistors Silicon DMOS RF FET 20W-28V-1GHz SE

Products specifications

Output Power	20 W
Maximum Operating Temperature	+ 150 C
Technology	Si
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Id - Continuous Drain Current	4 A
Transistor Polarity	N-Channel
Gain	10 dB

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Products specifications

Output Power	20 W
Maximum Operating Temperature	+ 150 C
Technology	Si
Product Type	RF MOSFET Transistors
Vds - Drain-Source Breakdown Voltage	65 V
Id - Continuous Drain Current	4 A
Transistor Polarity	N-Channel
Gain	10 dB