D2019UK

Call for pricing

RF MOSFET Transistors Silicon DMOS RF FET 2.5W-28V-1GHz SE

Availability: Out of stock

Qty:

Free shipping

RF MOSFET Transistors Silicon DMOS RF FET 2.5W-28V-1GHz SE

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Gain	13 dB
Id - Continuous Drain Current	1 A
Product Type	RF MOSFET Transistors
Technology	Si
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Output Power	2.5 W

Your name *

Your email *

Enquiry *

Products specifications

Vds - Drain-Source Breakdown Voltage	65 V
Gain	13 dB
Id - Continuous Drain Current	1 A
Product Type	RF MOSFET Transistors
Technology	Si
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Output Power	2.5 W