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RF MOSFET Transistors Silicon DMOS RF FET 1W-28V-2GHz SE

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RF MOSFET Transistors Silicon DMOS RF FET 1W-28V-2GHz SE

Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Id - Continuous Drain Current	1 A
Output Power	1 W
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Technology	Si
Gain	20 dB

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Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	65 V
Id - Continuous Drain Current	1 A
Output Power	1 W
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 150 C
Technology	Si
Gain	20 dB