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RF MOSFET Transistors Silicon DMOS RF FET 10W-7.2V-1GHz SE

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RF MOSFET Transistors Silicon DMOS RF FET 10W-7.2V-1GHz SE

Products specifications

Gain	7 dB
Vds - Drain-Source Breakdown Voltage	40 V
Output Power	10 W
Id - Continuous Drain Current	16 A
Technology	Si
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C

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Products specifications

Gain	7 dB
Vds - Drain-Source Breakdown Voltage	40 V
Output Power	10 W
Id - Continuous Drain Current	16 A
Technology	Si
Product Type	RF MOSFET Transistors
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C