RF MOSFET Transistors RF Transistor
Products specifications
| Vds - Drain-Source Breakdown Voltage | 125 V |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 200 C |
| Minimum Operating Temperature | - 65 C |
| Rds On - Drain-Source Resistance | 300 mOhms |
| Transistor Polarity | N-Channel |
| Technology | Si |
| Id - Continuous Drain Current | 18 A |
| Packaging | Tray |