MOSFET N-Ch 550V 17A I2PAK-3 CoolMOS CP
Lead Time: 0 Days
Products specifications
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS | Details |
| Technology | Si |
| Mounting Style | Through Hole |
| Package/Case | TO-262-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 550 V |
| Id - Continuous Drain Current | 17 A |
| Rds On - Drain-Source Resistance | 199 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 34 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 139 W |
| Configuration | Single |
| Tradename | CoolMOS |
| Packaging | Tube |
| Height | 9.45 mm |
| Length | 10.2 mm |
| Series | CoolMOS CE |
| Transistor Type | 1 N-Channel |
| Width | 4.5 mm |
| Brand | Infineon Technologies |
| Fall Time | 10 ns |
| Product Type | MOSFET |
| Rise Time | 14 ns |
| Factory Pack Quantity | 500 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 80 nS |
| Part # Aliases | IPI50R199CPXKSA1 SP000523756 IPI5R199CPXK IPI50R199CPXKSA1 |
| Unit Weight | 2.387 g |