MOSFET 20V 1 N-CH HEXFET 4mOhms 48nC
Lead Time: 0 Days
Products specifications
| Manufacturer | Infineon |
| Product Category | MOSFET |
| RoHS | Details |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package/Case | TO-252-3 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 4 mOhms |
| Vgs - Gate-Source Voltage | 12 V |
| Qg - Gate Charge | 48 nC |
| Pd - Power Dissipation | 63 W |
| Packaging | Tube |
| Configuration | Single |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Transistor Type | 1 N-Channel |
| Width | 6.22 mm |
| Brand | Infineon / IR |
| Product Type | MOSFET |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
| Part # Aliases | SP001578814 |
| Unit Weight | 4 g |