MOSFETs TO263 P CHAN 85V 96A
Lead Time: 196 Days
Products specifications
| Manufacturer | IXYS |
| Product Category | MOSFET |
| RoHS | Details |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package/Case | TO-263AA-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Vds - Drain-Source Breakdown Voltage | 85 V |
| Id - Continuous Drain Current | 96 A |
| Rds On - Drain-Source Resistance | 13 mOhms |
| Vgs - Gate-Source Voltage | 15 V |
| Vgs th - Gate-Source Threshold Voltage | - 2 V |
| Qg - Gate Charge | 180 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 298 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | Trench |
| Packaging | Cut Tape, Reel |
| Transistor Type | 1 P-Channel |
| Brand | IXYS |
| Forward Transconductance - Min | 40 S |
| Fall Time | 22 ns |
| Product Type | MOSFET |
| Rise Time | 34 ns |
| Factory Pack Quantity | 800 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 45 ns |
| Typical Turn-On Delay Time | 23 ns |
| Unit Weight | 2.500 g |