Bipolar Transistors - BJT
Lead Time: 0 Days
Products specifications
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS | N |
| Mounting Style | Through Hole |
| Package/Case | TO-220F-3 |
| Transistor Polarity | NPN |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Collector- Base Voltage VCBO | 700 V |
| Emitter- Base Voltage VEBO | 9 V |
| Collector-Emitter Saturation Voltage | 3 V |
| Maximum DC Collector Current | 12 A |
| Pd - Power Dissipation | 50 W |
| Gain Bandwidth Product fT | 4 MHz |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| DC Current Gain hFE Max | 40 |
| Technology | Si |
| Brand | ON Semiconductor / Fairchild |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Unit Weight | 3.610 g |