MOSFETs TO-220SIS PD=36W 1MHz PWR MOSFET TRNS
Lead Time: 112 Days
Products specifications
| Manufacturer | Toshiba |
| Product Category | MOSFET |
| RoHS | Details |
| Technology | Si |
| Mounting Style | Through Hole |
| Package/Case | TO-220SIS-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 36 A |
| Rds On - Drain-Source Resistance | 16 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 33 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 36 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | U-MOSIX-H |
| Packaging | Tube |
| Transistor Type | 1 N-Channel |
| Brand | Toshiba |
| Fall Time | 9 ns |
| Product Type | MOSFET |
| Rise Time | 6 ns |
| Factory Pack Quantity | 50 |
| Subcategory | MOSFETs |
| Typical Turn-Off Delay Time | 43 ns |
| Typical Turn-On Delay Time | 20 ns |
| Unit Weight | 1.700 g |