Bipolar Transistors - BJT 120V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Products specifications
|
Collector-Emitter Saturation Voltage
|
0.5 V |
|
Collector- Base Voltage VCBO
|
130 V |
|
Collector- Emitter Voltage VCEO Max
|
120 V |
|
Maximum DC Collector Current
|
0.6 A |
|
Mounting Style
|
Through Hole |
|
Emitter- Base Voltage VEBO
|
5 V |
|
Series
|
2N5400 |
|
Transistor Polarity
|
PNP |
|
Minimum Operating Temperature
|
- 65 C |
|
Maximum Operating Temperature
|
+ 150 C |
|
Configuration
|
Single |
|
Gain Bandwidth Product fT
|
400 MHz |