MPS6507

Bipolar Transistors - BJT 20V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

SKU: MPS6507 APM PBFREE

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R 4.33

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Bipolar Transistors - BJT 20V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Products specifications

Series	MPS6507
Technology	Si
Emitter- Base Voltage VEBO	3 V
Maximum DC Collector Current	50 mA
Collector- Emitter Voltage VCEO Max	20 V
Configuration	Single
Gain Bandwidth Product fT	700 MHz
Collector-Emitter Saturation Voltage	-
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector- Base Voltage VCBO	30 V
Transistor Polarity	NPN
Mounting Style	Through Hole

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Products specifications

Series	MPS6507
Technology	Si
Emitter- Base Voltage VEBO	3 V
Maximum DC Collector Current	50 mA
Collector- Emitter Voltage VCEO Max	20 V
Configuration	Single
Gain Bandwidth Product fT	700 MHz
Collector-Emitter Saturation Voltage	-
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Collector- Base Voltage VCBO	30 V
Transistor Polarity	NPN
Mounting Style	Through Hole