MOSFETs IFX FET 60V
Lead Time: 364 Days
Products specifications
|
Technology
|
Si |
|
Number of Channels
|
1 Channel |
|
Qg - Gate Charge
|
15 nC |
|
Vgs - Gate-Source Voltage
|
20 V |
|
Transistor Polarity
|
N-Channel |
|
Tradename
|
OptiMOS |
|
Configuration
|
Single |
|
Maximum Operating Temperature
|
+ 150 C |
|
Channel Mode
|
Enhancement |
|
Rds On - Drain-Source Resistance
|
8.5 mOhms |
|
Minimum Operating Temperature
|
- 55 C |
|
Id - Continuous Drain Current
|
40 A |
|
Vds - Drain-Source Breakdown Voltage
|
60 V |
|
Pd - Power Dissipation
|
36 W |
|
Vgs th - Gate-Source Threshold Voltage
|
2.1 V |
|
Packaging
|
Cut Tape, MouseReel, Reel |