JFETs 30V 10mA 300mW JFET THT
Products specifications
| Technology | Si |
| Vgs - Gate-Source Breakdown Voltage | - 30 V |
| Series | 2N26 |
| Packaging | Bulk |
| Vds - Drain-Source Breakdown Voltage | - 10 V |
| Configuration | Single |
| Pd - Power Dissipation | 300 mW |
| Id - Continuous Drain Current | 5 mA |
| Drain-Source Current at Vgs=0 | - 10 mA |
| Transistor Polarity | P-Channel |
| Mounting Style | Through Hole |