IFN410

JFET N-Ch -40V JFET -0.5 50mA 375mW -0.2Vgs

SKU: IFN410

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R 458.14

R 425.88

R 391.10

R 389.09

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JFET N-Ch -40V JFET -0.5 50mA 375mW -0.2Vgs

Products specifications

Technology	Si
Drain-Source Current at Vgs=0	5 mA
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Pd - Power Dissipation	375 mW
Vgs - Gate-Source Breakdown Voltage	- 40 V
Series	IFN411
Configuration	Dual
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 125 C
Packaging	Bulk

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Products specifications

Technology	Si
Drain-Source Current at Vgs=0	5 mA
Minimum Operating Temperature	- 55 C
Mounting Style	Through Hole
Pd - Power Dissipation	375 mW
Vgs - Gate-Source Breakdown Voltage	- 40 V
Series	IFN411
Configuration	Dual
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 125 C
Packaging	Bulk