IFN412

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JFET N-Ch -20V JFET -5Vgs 10mA 375mW 3mW

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JFET N-Ch -20V JFET -5Vgs 10mA 375mW 3mW

Products specifications

Series	IFN411
Minimum Operating Temperature	- 55 C
Drain-Source Current at Vgs=0	5 mA
Maximum Operating Temperature	+ 125 C
Configuration	Dual
Technology	Si
Packaging	Bulk
Mounting Style	Through Hole
Vgs - Gate-Source Breakdown Voltage	- 40 V
Pd - Power Dissipation	375 mW
Transistor Polarity	N-Channel

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Products specifications

Series	IFN411
Minimum Operating Temperature	- 55 C
Drain-Source Current at Vgs=0	5 mA
Maximum Operating Temperature	+ 125 C
Configuration	Dual
Technology	Si
Packaging	Bulk
Mounting Style	Through Hole
Vgs - Gate-Source Breakdown Voltage	- 40 V
Pd - Power Dissipation	375 mW
Transistor Polarity	N-Channel