MOSFETs MOSFET MOS8 1200 V 7 A TO-247
Lead Time: 140 Days
Products specifications
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 80 nC |
| Technology | Si |
| Packaging | Tube |
| Channel Mode | Enhancement |
| Vgs - Gate-Source Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 335 W |
| Tradename | POWER MOS 8 |
| Id - Continuous Drain Current | 8 A |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |