RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 300 W 150 MHz T3A
Products specifications
|
Output Power
|
900 W |
|
Technology
|
Si |
|
Vds - Drain-Source Breakdown Voltage
|
500 V |
|
Gain
|
15 dB |
|
Maximum Operating Temperature
|
+ 175 C |
|
Transistor Polarity
|
N-Channel |
|
Minimum Operating Temperature
|
- 55 C |
|
Id - Continuous Drain Current
|
10 A |
|
Product Type
|
RF MOSFET Transistors |