PD85006-E

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RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic

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RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic

Products specifications

Product Type	RF MOSFET Transistors
Packaging	Tube
Output Power	6 W
Technology	Si
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Gain	15 dB
Id - Continuous Drain Current	2 A
Vds - Drain-Source Breakdown Voltage	40 V

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Products specifications

Product Type	RF MOSFET Transistors
Packaging	Tube
Output Power	6 W
Technology	Si
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 150 C
Gain	15 dB
Id - Continuous Drain Current	2 A
Vds - Drain-Source Breakdown Voltage	40 V