RF MOSFET Transistors POWER R.F.
Products specifications
|
Minimum Operating Temperature
|
- 65 C |
|
Maximum Operating Temperature
|
+ 150 C |
|
Packaging
|
Bulk |
|
Gain
|
24.6 dB |
|
Id - Continuous Drain Current
|
20 A |
|
Vds - Drain-Source Breakdown Voltage
|
250 V |
|
Product Type
|
RF MOSFET Transistors |
|
Output Power
|
580 W |
|
Technology
|
Si |
|
Transistor Polarity
|
N-Channel |