RF MOSFET Transistors RF Trans 200V 300W 24 dB at 30 MHz
Products specifications
|
Technology
|
Si |
|
Gain
|
24 dB |
|
Transistor Polarity
|
N-Channel |
|
Output Power
|
300 W |
|
Product Type
|
RF MOSFET Transistors |
|
Vds - Drain-Source Breakdown Voltage
|
200 V |
|
Id - Continuous Drain Current
|
40 A |
|
Packaging
|
Bulk |
|
Maximum Operating Temperature
|
+ 150 C |