RF MOSFET Transistors 350W 29dB 30MHz STAC N-Ch RF FET
Products specifications
|
Product Type
|
RF MOSFET Transistors |
|
Maximum Operating Temperature
|
+ 150 C |
|
Packaging
|
Tube |
|
Vds - Drain-Source Breakdown Voltage
|
250 V |
|
Minimum Operating Temperature
|
- 65 C |
|
Output Power
|
350 W |
|
Gain
|
29 dB |
|
Transistor Polarity
|
N-Channel |
|
Technology
|
Si |
|
Id - Continuous Drain Current
|
20 A |