MOSFET 100V N-Channel QFET
Lead Time: 0 Days
Products specifications
| Technology | Si |
| Vgs - Gate-Source Voltage | 25 V |
| Mounting Style | Through Hole |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Packaging | Tube |
| Tradename | QFET |
| Id - Continuous Drain Current | 33 A |
| Pd - Power Dissipation | 127 W |
| Minimum Operating Temperature | - 55 C |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 52 mOhms |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Maximum Operating Temperature | + 175 C |