QSD123A4R0

Phototransistors Phototrans IR Chip NPN Transistor 880nm
Lead Time: 119 Days

SKU: QSD123A4R0

Availability: 1859 in stock

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Phototransistors Phototrans IR Chip NPN Transistor 880nm
Lead Time: 119 Days

Products specifications

Operating Supply Voltage	5 V
Fall Time	7 us
Series	QSD123
Dark Current	100 nA
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	0.4 V
Maximum On-State Collector Current	16 mA
Rise Time	7 us
Maximum Operating Temperature	+ 100 C
Collector- Emitter Voltage VCEO Max	5 V
Peak Wavelength	880 nm
Pd - Power Dissipation	100 mW

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Products specifications

Operating Supply Voltage	5 V
Fall Time	7 us
Series	QSD123
Dark Current	100 nA
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	0.4 V
Maximum On-State Collector Current	16 mA
Rise Time	7 us
Maximum Operating Temperature	+ 100 C
Collector- Emitter Voltage VCEO Max	5 V
Peak Wavelength	880 nm
Pd - Power Dissipation	100 mW