APA3010P3BT-GX

Phototransistors 30/5V VBR 15us IR 3x1x2mm
Lead Time: 70 Days

SKU: APA3010P3BT-GX

Availability: 3582 in stock

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Phototransistors 30/5V VBR 15us IR 3x1x2mm
Lead Time: 70 Days

Products specifications

Maximum Operating Temperature	+ 85 C
Fall Time	15 us
Collector-Emitter Breakdown Voltage	30 V
Product	Phototransistors
Maximum On-State Collector Current	0.3 mA
Pd - Power Dissipation	100 mW
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	30 V
Rise Time	15 us
Collector-Emitter Saturation Voltage	0.8 V
Dark Current	100 nA

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Products specifications

Maximum Operating Temperature	+ 85 C
Fall Time	15 us
Collector-Emitter Breakdown Voltage	30 V
Product	Phototransistors
Maximum On-State Collector Current	0.3 mA
Pd - Power Dissipation	100 mW
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	30 V
Rise Time	15 us
Collector-Emitter Saturation Voltage	0.8 V
Dark Current	100 nA