2N3819

JFETs 8V,10mA,360mW Through-Hole JFET N Channel

SKU: 2N3819 PBFREE

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2000+

4000+

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R 13.53

R 12.87

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JFETs 8V,10mA,360mW Through-Hole JFET N Channel

Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Mounting Style	Through Hole
Pd - Power Dissipation	360 mW
Id - Continuous Drain Current	20 mA
Technology	Si
Packaging	Bulk
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	25 V
Transistor Type	JFET

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Products specifications

Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	25 V
Mounting Style	Through Hole
Pd - Power Dissipation	360 mW
Id - Continuous Drain Current	20 mA
Technology	Si
Packaging	Bulk
Product Type	RF JFET Transistors
Vgs - Gate-Source Breakdown Voltage	25 V
Transistor Type	JFET