JFETs 8V,10mA,360mW Through-Hole JFET N Channel
Products specifications
|
Transistor Polarity
|
N-Channel |
|
Vds - Drain-Source Breakdown Voltage
|
25 V |
|
Mounting Style
|
Through Hole |
|
Pd - Power Dissipation
|
360 mW |
|
Id - Continuous Drain Current
|
20 mA |
|
Technology
|
Si |
|
Packaging
|
Bulk |
|
Product Type
|
RF JFET Transistors |
|
Vgs - Gate-Source Breakdown Voltage
|
25 V |
|
Transistor Type
|
JFET |