JFETs P-Ch 30Vgd JFET 30Vgs 50mA 225mW
Lead Time: 35 Days
Products specifications
|
Technology
|
Si |
|
Vgs - Gate-Source Breakdown Voltage
|
30 V |
|
Maximum Operating Temperature
|
+ 150 C |
|
Rds On - Drain-Source Resistance
|
125 Ohms |
|
Pd - Power Dissipation
|
350 mW |
|
Transistor Polarity
|
P-Channel |
|
Packaging
|
Reel |
|
Series
|
CMPFJ175 |
|
Minimum Operating Temperature
|
- 65 C |
|
Configuration
|
Single |
|
Vds - Drain-Source Breakdown Voltage
|
15 V |