2DB1132R-13

Bipolar Transistors - BJT 1000W -32Vceo
Lead Time: 168 Days

SKU: 2DB1132R-13

Availability: 2480 in stock

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R 15.66

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R 6.15

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R 3.61

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Bipolar Transistors - BJT 1000W -32Vceo
Lead Time: 168 Days

Products specifications

Maximum DC Collector Current	- 1 A
Collector-Emitter Saturation Voltage	- 125 mV
Configuration	Single
Emitter- Base Voltage VEBO	- 5 V
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 40 V
Gain Bandwidth Product fT	190 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	- 32 V
Series	2DB11

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Products specifications

Maximum DC Collector Current	- 1 A
Collector-Emitter Saturation Voltage	- 125 mV
Configuration	Single
Emitter- Base Voltage VEBO	- 5 V
Transistor Polarity	PNP
Collector- Base Voltage VCBO	- 40 V
Gain Bandwidth Product fT	190 MHz
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	- 32 V
Series	2DB11