2DB1188Q-13

Bipolar Transistors - BJT 1000W -32Vceo
Lead Time: 168 Days

SKU: 2DB1188Q-13

Availability: 1419 in stock

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R 16.94

R 10.43

R 6.69

R 5.10

R 4.56

R 3.72

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Bipolar Transistors - BJT 1000W -32Vceo
Lead Time: 168 Days

Products specifications

Maximum DC Collector Current	- 3 A
Emitter- Base Voltage VEBO	- 5 V
Series	2DB11
Gain Bandwidth Product fT	120 MHz
Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	- 32 V
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector-Emitter Saturation Voltage	- 800 mV
Minimum Operating Temperature	- 55 C
Collector- Base Voltage VCBO	- 40 V

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Products specifications

Maximum DC Collector Current	- 3 A
Emitter- Base Voltage VEBO	- 5 V
Series	2DB11
Gain Bandwidth Product fT	120 MHz
Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	- 32 V
Maximum Operating Temperature	+ 150 C
Configuration	Single
Collector-Emitter Saturation Voltage	- 800 mV
Minimum Operating Temperature	- 55 C
Collector- Base Voltage VCBO	- 40 V