MOSFETs 90V 4Ohm
Lead Time: 49 Days
Products specifications
| Pd - Power Dissipation | 6.25 W |
| Packaging | Bulk |
| Vds - Drain-Source Breakdown Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 800 mV |
| Mounting Style | Through Hole |
| Technology | Si |
| Number of Channels | 1 Channel |
| Rds On - Drain-Source Resistance | 4 Ohms |
| Id - Continuous Drain Current | 350 mA |
| Transistor Polarity | N-Channel |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Vgs - Gate-Source Voltage | 10 V |
| Channel Mode | Enhancement |
| Configuration | Single |