MOSFETs 90V 4Ohm
Lead Time: 42 Days
Products specifications
|
Pd - Power Dissipation
|
6.25 W |
|
Packaging
|
Bulk |
|
Vds - Drain-Source Breakdown Voltage
|
10 V |
|
Vgs th - Gate-Source Threshold Voltage
|
800 mV |
|
Mounting Style
|
Through Hole |
|
Technology
|
Si |
|
Number of Channels
|
1 Channel |
|
Rds On - Drain-Source Resistance
|
4 Ohms |
|
Id - Continuous Drain Current
|
350 mA |
|
Transistor Polarity
|
N-Channel |
|
Maximum Operating Temperature
|
+ 150 C |
|
Minimum Operating Temperature
|
- 55 C |
|
Vgs - Gate-Source Voltage
|
10 V |
|
Channel Mode
|
Enhancement |
|
Configuration
|
Single |