Phototransistors PHOTOTRANSISTOR
Products specifications
|
Collector-Emitter Saturation Voltage
|
200 mV |
|
Collector-Emitter Breakdown Voltage
|
35 V |
|
Mounting Style
|
Through Hole |
|
Collector- Emitter Voltage VCEO Max
|
35 V |
|
Rise Time
|
7 us |
|
Pd - Power Dissipation
|
165 mW |
|
Maximum Operating Temperature
|
+ 100 C |
|
Product
|
Phototransistors |
|
Maximum On-State Collector Current
|
15 mA |
|
Operating Supply Voltage
|
- |
|
Dark Current
|
15 mA |
|
Fall Time
|
7 us |
|
Minimum Operating Temperature
|
- 40 C |
|
Peak Wavelength
|
900 nm |