BFQ19SH6327XTSA1

RF Bipolar Transistors RF BIP TRANSISTORS

SKU: BFQ19SH6327XTSA1

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R 24.70

R 15.42

R 10.58

R 8.67

R 6.12

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RF Bipolar Transistors RF BIP TRANSISTORS

Products specifications

Manufacturer	Infineon
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	SMD/SMT
Package/Case	SOT-89-4
Pd - Power Dissipation	1 W
Packaging	Cut Tape, MouseReel, Reel
DC Current Gain hFE Max	140
Height	1.5 mm
Length	4.5 mm
Technology	Si
Width	2.5 mm
Brand	Infineon Technologies
Continuous Collector Current	120 mA
DC Collector/Base Gain hFE Min	70
Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000
Subcategory	Transistors
Part # Aliases	BFQ 19S H6327 SP001125294
Unit Weight	130.500 mg
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	15 V
Minimum Operating Temperature	- 65 C
Collector- Base Voltage VCBO	20 V
Emitter- Base Voltage VEBO	3 V
Transistor Polarity	NPN
Configuration	Single
Gain Bandwidth Product fT	5.5 GHz

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Products specifications

Manufacturer	Infineon
Product Category	Bipolar Transistors - BJT
RoHS	Details
Mounting Style	SMD/SMT
Package/Case	SOT-89-4
Pd - Power Dissipation	1 W
Packaging	Cut Tape, MouseReel, Reel
DC Current Gain hFE Max	140
Height	1.5 mm
Length	4.5 mm
Technology	Si
Width	2.5 mm
Brand	Infineon Technologies
Continuous Collector Current	120 mA
DC Collector/Base Gain hFE Min	70
Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	1000
Subcategory	Transistors
Part # Aliases	BFQ 19S H6327 SP001125294
Unit Weight	130.500 mg
Maximum Operating Temperature	+ 150 C
Collector- Emitter Voltage VCEO Max	15 V
Minimum Operating Temperature	- 65 C
Collector- Base Voltage VCBO	20 V
Emitter- Base Voltage VEBO	3 V
Transistor Polarity	NPN
Configuration	Single
Gain Bandwidth Product fT	5.5 GHz