BSB056N10NN3 G

MOSFETs N-Ch 100V 83A CanPAK3 MN OptiMOS 3
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SKU: BSB056N10NN3 G

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MOSFETs N-Ch 100V 83A CanPAK3 MN OptiMOS 3
Lead Time: 0 Days

Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Cut Tape, Reel
Rds On - Drain-Source Resistance	5.6 mOhms
Id - Continuous Drain Current	83 A
Tradename	OptiMOS
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Technology	Si
Vds - Drain-Source Breakdown Voltage	100 V
Packaging	Cut Tape, Reel
Rds On - Drain-Source Resistance	5.6 mOhms
Id - Continuous Drain Current	83 A
Tradename	OptiMOS
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel