BSC010NE2LSI

MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
Lead Time: 182 Days

SKU: BSC010NE2LSI

Availability: 597 in stock

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MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS
Lead Time: 182 Days

Products specifications

Pd - Power Dissipation	96 W
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	100 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	25 V
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	1.05 mOhms
Tradename	OptiMOS
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	59 nC

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Products specifications

Pd - Power Dissipation	96 W
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	100 A
Technology	Si
Vds - Drain-Source Breakdown Voltage	25 V
Packaging	Cut Tape, MouseReel, Reel
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Configuration	Single
Rds On - Drain-Source Resistance	1.05 mOhms
Tradename	OptiMOS
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	59 nC