BSC011N03LSATMA1

MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS
Lead Time: 105 Days

SKU: BSC011N03LSATMA1

Availability: 3631 in stock

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MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS
Lead Time: 364 Days

Products specifications

Pd - Power Dissipation	96 W
Technology	Si
Rds On - Drain-Source Resistance	900 uOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Qg - Gate Charge	96 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	100 A
Tradename	OptiMOS
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single
Minimum Operating Temperature	- 55 C

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Products specifications

Pd - Power Dissipation	96 W
Technology	Si
Rds On - Drain-Source Resistance	900 uOhms
Vgs - Gate-Source Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	1.2 V
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	30 V
Qg - Gate Charge	96 nC
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	100 A
Tradename	OptiMOS
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single
Minimum Operating Temperature	- 55 C