150-102N02A-00

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RF MOSFET Transistors DE-150 1000V 2A N Channel MOSFET Transistor
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SKU: 150-102N02A-00

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RF MOSFET Transistors DE-150 1000V 2A N Channel MOSFET Transistor
Lead Time: 0 Days

Products specifications

Rds On - Drain-Source Resistance	7.8 Ohms
Id - Continuous Drain Current	2 A
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Packaging	Tube
Technology	Si
Output Power	200 W
Vds - Drain-Source Breakdown Voltage	1000 V
Transistor Polarity	N-Channel

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Products specifications

Rds On - Drain-Source Resistance	7.8 Ohms
Id - Continuous Drain Current	2 A
Product Type	RF MOSFET Transistors
Maximum Operating Temperature	+ 175 C
Minimum Operating Temperature	- 55 C
Packaging	Tube
Technology	Si
Output Power	200 W
Vds - Drain-Source Breakdown Voltage	1000 V
Transistor Polarity	N-Channel