IXFX21N100F

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RF MOSFET Transistors IXFX21N100F F-Class HiPerRF Capable MOSFET IXFX21N100F IXYS

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RF MOSFET Transistors IXFX21N100F F-Class HiPerRF Capable MOSFET IXFX21N100F IXYS

Products specifications

Packaging	Tube
Rds On - Drain-Source Resistance	500 mOhms
Id - Continuous Drain Current	21 A
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	1000 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Product Type	RF MOSFET Transistors

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Products specifications

Packaging	Tube
Rds On - Drain-Source Resistance	500 mOhms
Id - Continuous Drain Current	21 A
Mounting Style	Through Hole
Vds - Drain-Source Breakdown Voltage	1000 V
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Product Type	RF MOSFET Transistors