2SK3476(TE12L,Q)

RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS

SKU: 2SK3476(TE12L,Q)

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R 137.90

R 115.86

R 109.45

R 93.56

R 83.30

R 71.26

R 69.21

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RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS

Products specifications

Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	3 A
Output Power	7 W
Technology	Si
Transistor Polarity	N-Channel
Gain	11.4 dB
Product Type	RF MOSFET Transistors
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	3 A
Output Power	7 W
Technology	Si
Transistor Polarity	N-Channel
Gain	11.4 dB
Product Type	RF MOSFET Transistors
Packaging	Cut Tape, MouseReel, Reel