MOSFETs P-Ch Vth -0.5 -1.5V RDS 2.4Ohm 200mW
Lead Time: 98 Days
Products specifications
|
Configuration
|
Single |
|
Vgs - Gate-Source Voltage
|
2.5 V |
|
Pd - Power Dissipation
|
200 mW |
|
Vds - Drain-Source Breakdown Voltage
|
30 V |
|
Number of Channels
|
1 Channel |
|
Channel Mode
|
Enhancement |
|
Technology
|
Si |
|
Packaging
|
Cut Tape, MouseReel, Reel |
|
Vgs th - Gate-Source Threshold Voltage
|
500 mV |
|
Id - Continuous Drain Current
|
200 mA |
|
Rds On - Drain-Source Resistance
|
4 Ohms |
|
Transistor Polarity
|
P-Channel |
|
Maximum Operating Temperature
|
+ 150 C |