A2T18S262W12NR3

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V

SKU: A2T18S262W12NR3

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250+

Price

R 2,558.59

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V

Products specifications

Id - Continuous Drain Current	3.2 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors
Gain	19.3 dB
Transistor Polarity	N-Channel
Technology	Si
Output Power	56 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C

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Products specifications

Id - Continuous Drain Current	3.2 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Product Type	RF MOSFET Transistors
Gain	19.3 dB
Transistor Polarity	N-Channel
Technology	Si
Output Power	56 W
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 40 C