A2T21H360-23NR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V

SKU: A2T21H360-23NR6

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150+

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R 4,512.51

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RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V

Products specifications

Output Power	63 W
Technology	Si
Gain	16.8 dB
Transistor Polarity	Dual N-Channel
Id - Continuous Drain Current	2.4 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 5 V
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors

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Products specifications

Output Power	63 W
Technology	Si
Gain	16.8 dB
Transistor Polarity	Dual N-Channel
Id - Continuous Drain Current	2.4 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 5 V
Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 150 C
Product Type	RF MOSFET Transistors